SPN2342W datasheet, mosfet equivalent, SYNC POWER

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 349.50KB)

Features and benefits

* 20V/4.0A,RDS(ON)=35mΩ@VGS=4.5V
* 20V/3.0A,RDS(ON)=40mΩ@VGS=2.5V
* 20V/2.0A,RDS(ON)=55mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(.

Application

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.

Description

The SPN2342W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

Image gallery