SPN2302 mosfet equivalent, n-channel mosfet.
* 20V/3.6A,RDS(ON)=80mΩ@VGS=4.5V
* 20V/3.1A,RDS(ON)=95mΩ@VGS=2.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistance .
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
Image gallery
TAGS
Download (Size : 372.77KB)