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SPN2302W - N-Channel MOSFET

Description

The SPN2302W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 20V/3.6A,RDS(ON)= 97mΩ@VGS=4.5V 20V/3.1A,RDS(ON)= 113mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN.

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Datasheet Details

Part number SPN2302W
Manufacturer SYNC POWER
File Size 265.29 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN2302W Datasheet
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SPN2302W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES 20V/3.6A,RDS(ON)= 97mΩ@VGS=4.5V 20V/3.1A,RDS(ON)= 113mΩ@VGS=2.
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