SPN2304 - N-Channel MOSFET

Description

The SPN2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

30V/3.2A,RDS(ON)=65mΩ@VGS=10V.
30V/2.0A,RDS(ON)=90mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOT-23-3L package design PIN.

SYNC

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Datasheet Details

Part number	SPN2304
Manufacturer	SYNC
File Size	337.71 KB
Description	N-Channel MOSFET
Datasheet	SPN2304 Datasheet
Additional preview pages of the SPN2304 datasheet.

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Full PDF Text Transcription

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SPN2304 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  30V/3.2A,RDS(ON)=65mΩ@VGS=10V  30V/2.0A,RDS(ON)=90mΩ@VGS=4.

Published: Dec 30, 2006 |