Datasheet4U Logo Datasheet4U.com

SPN230T06 - N-Channel MOSFET

Description

The SPN230T06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 60V/230A, RDS(ON)=2.5mΩ@VGS=10V.
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L and TO-263-2L package design PIN.

📥 Download Datasheet

Datasheet preview – SPN230T06

Datasheet Details

Part number SPN230T06
Manufacturer SYNC POWER
File Size 471.62 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN230T06 Datasheet
Additional preview pages of the SPN230T06 datasheet.

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPN230T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN230T06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  AC/DC Synchronous Rectifier  Load Switch  UPS  Power Tool  Motor Control FEATURES  60V/230A, RDS(ON)=2.
Published: |