SPN2302W mosfet equivalent, n-channel mosfet.
20V/3.6A,RDS(ON)= 97mΩ@VGS=4.5V 20V/3.1A,RDS(ON)= 113mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC curren.
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inve.
The SPN2302W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
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