SPN2304W datasheet, mosfet equivalent, SYNC POWER

Features and benefits

* 30V/3.2A,RDS(ON)=65mΩ@VGS=10V
* 30V/2.0A,RDS(ON)=90mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance an.

Application

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.

Description

The SPN2304W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.

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