SPN2302D mosfet equivalent, n-channel mosfet.
* 20V/3.6A,RDS(ON)=97mΩ@VGS=4.5V
* 20V/3.1A,RDS(ON)=113mΩ@VGS=2.5V
* 20V/2.8A,RDS(ON)=140mΩ@VGS=1.8V
* Super high density cell design for extremely low
RD.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
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