SPN180N10 mosfet equivalent, n-channel mosfet.
* 100V/184A, RDS(ON)=3.7mΩ@VGS=10V
* High density cell design or extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
* TO-.
* AC/DC Synchronous Rectifier
* Load Switch
* UPS
* Power Tool
* Motor Control
FEATURES
* 100V/.
The SPN180N10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .
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