* N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
* Super high density cell design for extremely low .

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

The SPN1024 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior swi.

SPN1022

SPN1026

SPN1028

SPN100T12

SPN1012

SPN1014

SPN1032

SPN1072

SPN1074

SPN10T10

SPN11T10

SPN11T11

SPN120T06

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