SPN1026 mosfet equivalent, dual n-channel mosfet.
* 60V/0.50A , RDS(ON)=5.0Ω@VGS=10V
* 60V/0.30A , RDS(ON)=5.5Ω@VGS=5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistan.
requiring up to 320mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low volt.
The SPN1026 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching per.
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