SPN1028 mosfet equivalent, dual n-channel mosfet.
* 30V/0.95A , RDS(ON)=550mΩ@VGS=4.5V
* 30V/0.75A , RDS(ON)=650mΩ@VGS=2.5V
* 30V/0.65A , RDS(ON)=850mΩ@VGS=1.8V
* Super high density cell design for extrem.
requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low vol.
The SPN1028 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching per.
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