SPN1012 Datasheet | SYNC POWER

DESCRIPTION The SPN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS - Drivers : Relays/Solenoids/Lamps/Hammers - Power Supply Converter Circuits - Load/Power Switching Cell Phones, Pagers FEATURES - N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-523 (SC-89) package design PIN CONFIGURATION (SOT-523 / SC-89) PART MARKING 2020/04/15 Ver.4 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN1012S52RGB SOT-523 ※ SPN1012S52RGB : Tape Reel ; Pb - Free, Halogen - Free Part Marking X ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS Gate...