SPN1012 mosfet equivalent, n-channel mosfet.
* N-Channel
20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
* Super high density cell design for extremely low .
such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.
The SPN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switchin.
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