* N-Channel 30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V 30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V 30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V
* Super high density cell design for extremely low .

such as notebook computer power management and other battery powered circuits where high-side switching, low in-line pow.

The SPN1032 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts