SPN11T10 mosfet equivalent, n-channel mosfet.
* 100V/12A, RDS(ON)=120mΩ@VGS=10V
* High density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current
capability
* TO.
* Powered System
* DC/DC Converter
* Load Switch
FEATURES
* 100V/12A, RDS(ON)=120mΩ@VGS=10V
* High .
The SPN11T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN11T10 has been designed specifically to improve the overall efficiency of DC/DC converte.
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