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STPSC40H12C Datasheet, STMicroelectronics

STPSC40H12C diode equivalent, 40a power schottky silicon carbide diode.

STPSC40H12C Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 436.26KB)

STPSC40H12C Datasheet
STPSC40H12C
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 436.26KB)

STPSC40H12C Datasheet

Features and benefits


* None or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* Operating Tj from -40 °C to 175 °C.

Application


* Solar inverter
* Boost PFC
* Air conditioning equipment
* UPS power supply
* Telecom / Server powe.

Description

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating..

Image gallery

STPSC40H12C Page 1 STPSC40H12C Page 2 STPSC40H12C Page 3

TAGS

STPSC40H12C
40A
power
Schottky
silicon
carbide
diode
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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