STPSC40H12C datasheet, diode equivalent, STMicroelectronics

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Features and benefits

* None or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* Operating Tj from -40 °C to 175 °C.

Application

* Solar inverter
* Boost PFC
* Air conditioning equipment
* UPS power supply
* Telecom / Server powe.

Description

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating..

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