STPSC40H12C-Y datasheet, diode equivalent, STMicroelectronics

Features and benefits

* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high-voltage periphery
* PPAP capabl.

Application

* OBC (On Board Battery chargers)
* PHEV - EV charging stations
* Resonant LLC topology
* PFC functions .

Description

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Du.

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