STH110N7F6-2 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram '7$% * Order code VDS RDS(on)max. ID PTOT STH110N7F6-2 68 V 0.0063 Ω 110 A 176 W
* Very low on-resistanc.

Application

* Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 techn.

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 $0Y Order code STH110N7F6-2 Table 1. Devic.

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