| Description | These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH110N10F7-2 STH110N10F7-6 110N10F7 H2PAK-2 H2PAK-6 Tape and reel November 2014 DocID024027 R... |
| Features |
Order code
STH110N10F7-2 STH110N10F7-6
VDS 100 V
RDS(on) max.
6.5 mΩ
ID PTOT 110 A 150 W
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology ... |
| Datasheet |
 STH110N10F7-2 Datasheet - 694.21KB |
