STH110N10F7-2 mosfet equivalent, n-channel power mosfet.
Order code
STH110N10F7-2 STH110N10F7-6
VDS 100 V
RDS(on) max.
6.5 mΩ
ID PTOT 110 A 150 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit.
* Switching applications
Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced.
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Table 1: De.
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