STH110N10F7-6 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code STH110N10F7-2 STH110N10F7-6 VDS 100 V RDS(on) max. 6.5 mΩ ID PTOT 110 A 150 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit.

Application

* Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced.

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: De.

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