STH10N80K5-2AG mosfet equivalent, automotive-grade n-channel power mosfet.
Order code STH10N80K5-2AG
VDS
RDS(on) max.
ID
800 V
0.68 Ω
8A
* AEC-Q101 qualified
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of .
* Switching applications
DTG1S23NZ
Description
This very high voltage N-channel Power MOSFET is designed using MDm.
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring super.
Image gallery
TAGS