STGYA75H120DF2 igbt equivalent, igbt.
* Maximum junction temperature: TJ = 175 °C
* 5 μs of short-circuit withstand time
* VCE(sat) = 2.1 V (typ.) @ IC = 75 A
* Tight parameter distribution
* UPS
* Solar inverters
* Welding
* PFC
Description
This device is IGBT developed using an advanced prop.
This device is IGBT developed using an advanced proprietary trench gate fieldstop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of hig.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 2.14MB)