STGYA120M65DF2 datasheet, igbt equivalent, STMicroelectronics

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Features and benefits

* Maximum junction temperature: TJ = 175 °C
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.65 V (typ.) @ IC = 120 A
* Tight parameter distr.

Application

* Motor control
* UPS
* PFC
* General purpose inverter Description E(3) NG1E3C2T This device is an I.

Description

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where.

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