* Maximum junction temperature: TJ = 175 °C
* 5 μs of short-circuit withstand time
* Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
* Tight parameter distributio.

* UPS
* Solar inverters
* Welding
* PFC Description This device is IGBT developed using an advanced prop.

This device is IGBT developed using an advanced proprietary trench gate fieldstop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of hig.

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