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STGYA50M120DF3 Datasheet, STMicroelectronics

STGYA50M120DF3 igbt equivalent, igbt.

STGYA50M120DF3 Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 2.12MB)

STGYA50M120DF3 Datasheet
STGYA50M120DF3 Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 2.12MB)

STGYA50M120DF3 Datasheet

Features and benefits


* Maximum junction temperature: TJ = 175 °C
* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A
* Tight parameter distributi.

Application


* Industrial drives
* UPS
* Solar inverters
* General purpose inverter Description This device is an IGB.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the.

Image gallery

STGYA50M120DF3 Page 1 STGYA50M120DF3 Page 2 STGYA50M120DF3 Page 3

TAGS

STGYA50M120DF3
IGBT
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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