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STGYA120M65DF2AG - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGYA120M65DF2AG
Manufacturer	STMicroelectronics ↗
File Size	2.13 MB
Description	IGBT
Datasheet	STGYA120M65DF2AG-STMicroelectronics.pdf

STGYA120M65DF2AG Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

TAB 1 23 TAB 1 2 3 Max247 long leads C(2, TAB) G(1) E(3) NG1E3C2T.
AEC-Q101 qualified.
6 µs of short-circuit withstand time.
VCE(sat) = 1.65 V (typ. ) @ IC = 120 A.
Tight parameter distribution.
Safer paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.
Maximum junction temperature: TJ = 175 °C.

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Published: Mar 1, 2023 |