STGYA120M65DF2AG datasheet, igbt equivalent, STMicroelectronics

Features and benefits

TAB 1 23 TAB 1 2 3 Max247 long leads C(2, TAB) G(1) E(3) NG1E3C2T
* AEC-Q101 qualified
* 6 µs of short-circuit withstand time
* VCE(sat) = 1.65 V (typ.

Application

* Heating system
* HV battery disconnect and fire-off system
* Main inverter (electric traction) Description.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the.

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