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STGYA120M65DF2 - IGBT

Description

stop structure.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • 6 μs of minimum short-circuit withstand time.
  • VCE(sat) = 1.65 V (typ. ) @ IC = 120 A.
  • Tight parameter distribution.
  • Safer paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Soft- and fast-recovery antiparallel diode.

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Full PDF Text Transcription

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STGYA120M65DF2 Datasheet Trench gate field-stop, 650 V, 120 A, low-loss M series IGBT in a Max247 long leads package TAB 1 23 TAB 1 2 3 Max247 long leads C(2, TAB) G(1) Features • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 120 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft- and fast-recovery antiparallel diode Applications • Motor control • UPS • PFC • General purpose inverter Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure.
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