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STGYA50H120DF2 - IGBT

Description

This device is IGBT developed using an advanced proprietary trench gate fieldstop structure.

This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • 5 μs of short-circuit withstand time.
  • Low VCE(sat) = 2.1 V (typ. ) @ IC = 50 A.
  • Tight parameter distribution.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Very fast recovery antiparallel diode.

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Full PDF Text Transcription

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STGYA50H120DF2 Datasheet Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package TAB 1 23 TAB 1 2 3 Max247 long leads C(2, TAB) G(1) E(3) NG1E3C2T Features • Maximum junction temperature: TJ = 175 °C • 5 μs of short-circuit withstand time • Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast recovery antiparallel diode Applications • UPS • Solar inverters • Welding • PFC Description This device is IGBT developed using an advanced proprietary trench gate fieldstop structure.
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