* AEC-Q101 qualified
* Maximum junction temperature: TJ = 175 °C
* High-speed switching series
* Minimized tail current
* VCE(sat) = 1.65 V (typ.) @ I.

* PFC
* High frequency converters Description This device is an IGBT developed using an advanced proprietary tre.

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency .

STGWA80H65FB

STGWA80H65DFBAG

STGWA100H65DFB2

STGWA15H120DF2

STGWA15M120DF3

STGWA19NC60HD

STGWA20HP65FB2

STGWA25H120DF2

STGWA25H120F2

STGWA25IH135DF2

STGWA30H60DFB

STGWA30H65DFB2

STGWA30H65FB

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