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STGWA15H120DF2 - IGBT

This page provides the datasheet information for the STGWA15H120DF2, a member of the STGW15H120DF2 IGBT family.

Datasheet Summary

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 2.1 V @ IC = 15 A.
  • 5 μs minimum short circuit withstand time at TJ = 150 °C.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast recovery antiparallel diode.

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STGW15H120DF2, STGWA15H120DF2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 3 2 1 TO-247 3 2 1 TO-247 long leads Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V @ IC = 15 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance • Very fast recovery antiparallel diode Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
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