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STGW30N90D - IGBT

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Description

Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances.

Figure 1.

Table 1.

Features

  • Type STGW30N90D.
  • VCES 900V VCE(sat) @25°C < 2.75V IC @100°C 30A Low on-losses Low on-voltage drop (Vcesat) High current capability High input impedance (voltage driven) Low gate charge Ideal for soft switching.

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www.DataSheet4U.com STGW30N90D N-channel 900V - 30A - TO-247 Very fast PowerMESH™ IGBT Preliminary Data Features Type STGW30N90D ■ ■ ■ ■ ■ ■ VCES 900V VCE(sat) @25°C < 2.75V IC @100°C 30A Low on-losses Low on-voltage drop (Vcesat) High current capability High input impedance (voltage driven) Low gate charge Ideal for soft switching application TO-247 Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. Figure 1. Internal schematic diagram Application ■ Induction heating Table 1. Device summary Marking GW30N90D Package TO-247 Packaging Tube Order code STGW30N90D July 2007 Rev 1 1/10 www.st.
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