Datasheet4U Logo Datasheet4U.com

STGWA25H120DF2 - Trench gate field-stop IGBT

This page provides the datasheet information for the STGWA25H120DF2, a member of the STGW25H120DF2 Trench gate field-stop IGBT family.

Datasheet Summary

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 2.1 V (typ. ) @ IC = 25 A.
  • 5 μs minimum short circuit withstand time at TJ = 150 °C.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast recovery antiparallel diode.

📥 Download Datasheet

Datasheet preview – STGWA25H120DF2

Datasheet Details

Part number STGWA25H120DF2
Manufacturer STMicroelectronics
File Size 911.18 KB
Description Trench gate field-stop IGBT
Datasheet download datasheet STGWA25H120DF2 Datasheet
Additional preview pages of the STGWA25H120DF2 datasheet.

📁 Similar Datasheet

Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STGW25H120DF2, STGWA25H120DF2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 3 2 1 TO-247 3 12 TO-247 long leads Product status links STGW25H120DF2 STGWA25H120DF2 Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance • Very fast recovery antiparallel diode Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
Published: |