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STGWA25H120F2 - Trench gate field-stop IGBT

This page provides the datasheet information for the STGWA25H120F2, a member of the STGW25H120F2 Trench gate field-stop IGBT family.

Datasheet Summary

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 2.1 V (typ. ) @ IC = 25 A.
  • 5 µs minimum short circuit withstand time at TJ=150 °C.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance Figure 1. Internal schematic diagram C (2) G (1) SC12850 E (3).

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Datasheet preview – STGWA25H120F2

Datasheet Details

Part number STGWA25H120F2
Manufacturer STMicroelectronics
File Size 601.16 KB
Description Trench gate field-stop IGBT
Datasheet download datasheet STGWA25H120F2 Datasheet
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STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data 72       72ORQJOHDGV Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 µs minimum short circuit withstand time at TJ=150 °C • Tight parameters distribution • Safe paralleling • Low thermal resistance Figure 1. Internal schematic diagram C (2) G (1) SC12850 E (3) Applications • Uninterruptible power supply • Welding machines • Photovoltaic inverters • Power factor correction • High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
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