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STGWA80H65DFB - 650V 80A IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 80 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

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Full PDF Text Transcription

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STGWA80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT TO-247 long leads Product status link STGWA80H65DFB Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Solar inverters (string and central) • AC-DC converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
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