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STGWA80H65FBAG - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

  • AEC-Q101 qualified.
  • Maximum junction temperature: TJ = 175 °C.
  • High-speed switching series.
  • Minimized tail current.
  • VCE(sat) = 1.65 V (typ. ) @ IC = 80 A.
  • Tight parameters distribution.
  • Safer paralleling.
  • Low thermal resistance.

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Full PDF Text Transcription

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STGWA80H65FBAG Datasheet Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads TO-247 long leads C(2, TAB) G(1) E(3) G1C2TABE3_NO_DIODE Features • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • High-speed switching series • Minimized tail current • VCE(sat) = 1.65 V (typ.) @ IC = 80 A • Tight parameters distribution • Safer paralleling • Low thermal resistance Applications • PFC • High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
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