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STGWA80H65DFBAG - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

  • TO-247 long leads C(2, TAB).
  • AEC-Q101 qualified.
  • High-speed switching series.
  • Maximum junction temperature: TJ = 175 °C.
  • Low VCE(sat) = 1.65 V (typ. ) @ IC = 80 A.
  • Minimized tail current.
  • Tight parameter distribution.
  • Positive temperature VCE(sat) coefficient.
  • Soft and very fast recovery antiparallel diode.

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Full PDF Text Transcription

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STGWA80H65DFBAG Datasheet Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads Features TO-247 long leads C(2, TAB) • AEC-Q101 qualified • High-speed switching series • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.65 V (typ.) @ IC = 80 A • Minimized tail current • Tight parameter distribution • Positive temperature VCE(sat) coefficient • Soft and very fast recovery antiparallel diode Applications G(1) • PFC • High frequency converters E(3) G1C2TE3_diode Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
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