logo

STGWA80H65DFBAG Datasheet, STMicroelectronics

STGWA80H65DFBAG igbt equivalent, igbt.

STGWA80H65DFBAG Avg. rating / M : 1.0 rating-12

datasheet Download

STGWA80H65DFBAG Datasheet

Features and benefits

TO-247 long leads C(2, TAB)
* AEC-Q101 qualified
* High-speed switching series
* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.65 V (typ..

Application

G(1)
* PFC
* High frequency converters E(3) G1C2TE3_diode Description This device is an IGBT developed using a.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency .

Image gallery

STGWA80H65DFBAG Page 1 STGWA80H65DFBAG Page 2 STGWA80H65DFBAG Page 3

TAGS

STGWA80H65DFBAG
IGBT
STGWA80H65FB
STGWA80H65FBAG
STGWA100H65DFB2
STMicroelectronics

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts