STGWA80H65DFBAG datasheet, igbt equivalent, STMicroelectronics

Features and benefits

TO-247 long leads C(2, TAB)
* AEC-Q101 qualified
* High-speed switching series
* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.65 V (typ..

Application

G(1)
* PFC
* High frequency converters E(3) G1C2TE3_diode Description This device is an IGBT developed using a.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency .

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