STGWA75M65DF2 igbt equivalent, igbt.
* 6 µs of short-circuit withstand time
* VCE(sat) = 1.65 V (typ.) @ IC = 75 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resista.
* Motor control
* UPS
* PFC
Description
These devices are IGBTs developed using an advanced proprietary tren.
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and sho.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 834.36KB)