STGWA100H65DFB2 - IGBT

STMicroelectronics

STGWA100H65DFB2 Description

STGWA100H65DFB2 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO‑247 long leads package TO-247 long leads C(2, TAB).
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

STGWA100H65DFB2 Features

* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.55 V (typ. ) @ IC = 100 A
* Very fast and soft recovery co-packaged diode
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) tempera

STGWA100H65DFB2 Applications

* Welding
* Power factor correction
* UPS
* Solar inverters

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Datasheet Details

Part number: STGWA100H65DFB2
Manufacturer: STMicroelectronics ↗
File Size: 315.65 KB
Datasheet: STGWA100H65DFB2-STMicroelectronics.pdf
Description: IGBT

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