* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A
* Very fast and soft recovery co-packaged diode
* Minimized tail c.

* Welding
* Power factor correction
* UPS
* Solar inverters
* Chargers Description The newest IGBT .

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts