STGWA75H65DFB2 datasheet, igbt equivalent, STMicroelectronics

Features and benefits

C(2, TAB)
* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
* Very fast and soft recovery co-packaged diode
* Minimi.

Application

G(1) E(3)
* Welding
* Power factor correction
* UPS
* Solar inverters
* Chargers NG1E3C2T Descript.

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values,.

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