STGWA25H120F2 igbt equivalent, trench gate field-stop igbt.
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 2.1 V (typ.) @ IC = 25 A
* 5 µs minimu.
* Uninterruptible power supply
* Welding machines
* Photovoltaic inverters
* Power factor correction
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficienc.
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