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STGWA15M120DF3 - Trench gate field-stop IGBT

Download the STGWA15M120DF3 datasheet PDF. This datasheet also covers the STGW15M120DF3 variant, as both devices belong to the same trench gate field-stop igbt family and are provided as variant models within a single manufacturer datasheet.

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential.

Features

  • 10 µs of short-circuit withstand time.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 15 A.
  • Tight parameters distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and fast recovery antiparallel diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW15M120DF3-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data    72 72ORQJOHDGV Figure 1.Internal schematic diagram & RU7$% *  Features • 10 µs of short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 15 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential.
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