STG60H65FBD7 datasheet, igbt equivalent, STMicroelectronics

Features and benefits

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Very low saturation voltage: VCE(sat) = 1.65 V (.

Application

* Solar
* Welding
* High frequency converter Description This device is an IGBT developed using an advanc.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency.

Image gallery