STF10NM60ND mosfet equivalent, n-channel power mosfet.
Order code
VDS at TJ max.
RDS(on) max.
ID
STF10NM60ND
650 V
600 mΩ
8A
* Fast-recovery body diode
* Low gate charge and input capacitance
*
Low on-.
* Switching applications
Description
This FDmesh II Power MOSFET with fast-recovery body diode is produced using .
This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topo.
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