STF10NM60N mosfet equivalent, n-channel power mosfet.
Order code
VDS
RDS(on) max.
ID
STF10NM60N
600 V
550 mΩ
10 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistan.
* Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generati.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.
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