STF10N60M2 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STF10N60M2 VDS at TJmax. 650 V RDS(on) max. 0.60 Ω ID 7.5 A
* Extremely low gate charge
* Excellent output capacitance (Coss) profile
* 100% av.

Application

* Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology..

Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the.

Image gallery