* Drain-source on-resistance: RDS(on) ≤ 0.6Ω (max)
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for r.

*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Volt.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts