STF10NM50N Datasheet | STMicroelectronics

STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™ II Power MOSFET Features Type VDSS (@Tjmax) RDS(on) max STD10NM50N STF10NM50N STP10NM50N 550 V < 0.63 Ω 7 A - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Applications - Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency...