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STD5NM50AG - N-channel Power MOSFET

Description

the company's PowerMESH horizontal layout.

Features

  • Order code STD5NM50AG VDS 500 V RDS(on) max. 0.8 Ω.
  • AEC-Q101 qualified.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance ID 7.5 A.

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Full PDF Text Transcription

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STD5NM50AG Datasheet Automotive-grade N-channel 500 V, 0.7 Ω typ., 7.5 A, MDmesh Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order code STD5NM50AG VDS 500 V RDS(on) max. 0.8 Ω • AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 7.5 A Applications G(1) • Switching applications S(3) Description AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on- resistance, high dv/dt and excellent avalanche characteristics.
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