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STD5NM50T4 - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤0.8Ω.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STD5NM50T4

Datasheet Details

Part number STD5NM50T4
Manufacturer INCHANGE
File Size 273.26 KB
Description N-Channel MOSFET
Datasheet download datasheet STD5NM50T4 Datasheet
Additional preview pages of the STD5NM50T4 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor STD5NM50T4 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7.5 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 1.25 UNIT ℃/W isc website：www.iscsemi.
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